IPP60R125CPXKSA1 vs IPP60R165CPXKSA1

Product Attributes

Part Number IPP60R125CPXKSA1 IPP60R165CPXKSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPP60R125CPXKSA1 IPP60R165CPXKSA1
Product Status Not For New Designs Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc) 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 16A, 10V 165mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1.1mA 3.5V @ 790µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V 52 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 100 V 2000 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 208W (Tc) 192W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-3 PG-TO220-3
Package / Case TO-220-3 TO-220-3