IPP60R250CPXKSA1 vs IPP50R250CPXKSA1

Product Attributes

Part Number IPP60R250CPXKSA1 IPP50R250CPXKSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPP60R250CPXKSA1 IPP50R250CPXKSA1
Product Status Obsolete Not For New Designs
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 650 V -
Current - Continuous Drain (Id) @ 25°C 12A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 250mOhm @ 7.8A, 10V -
Vgs(th) (Max) @ Id 3.5V @ 440µA -
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 100 V -
FET Feature - -
Power Dissipation (Max) 104W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Through Hole -
Supplier Device Package PG-TO220-3 -
Package / Case TO-220-3 -