IPP10N03LB G vs IPP13N03LB G

Product Attributes

Part Number IPP10N03LB G IPP13N03LB G
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPP10N03LB G IPP13N03LB G
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.9mOhm @ 50A, 10V 12.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 20µA 2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 5 V 10 nC @ 5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1639 pF @ 15 V 1355 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 58W (Tc) 52W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-3-1 PG-TO220-3-1
Package / Case TO-220-3 TO-220-3