IPP12CNE8N G vs IPP16CNE8N G

Product Attributes

Part Number IPP12CNE8N G IPP16CNE8N G
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPP12CNE8N G IPP16CNE8N G
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 85 V 85 V
Current - Continuous Drain (Id) @ 25°C 67A (Tc) 53A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 12.9mOhm @ 67A, 10V 16.5mOhm @ 53A, 10V
Vgs(th) (Max) @ Id 4V @ 83µA 4V @ 61µA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V 48 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4340 pF @ 40 V 3230 pF @ 40 V
FET Feature - -
Power Dissipation (Max) 125W (Tc) 100W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-3 PG-TO220-3
Package / Case TO-220-3 TO-220-3