IPP12CN10LGXKSA1 vs IPP12CN10NGXKSA1

Product Attributes

Part Number IPP12CN10LGXKSA1 IPP12CN10NGXKSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPP12CN10LGXKSA1 IPP12CN10NGXKSA1
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 69A (Tc) 67A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 69A, 10V 12.9mOhm @ 67A, 10V
Vgs(th) (Max) @ Id 2.4V @ 83µA 4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 10 V 65 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5600 pF @ 50 V 4320 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 125W (Tc) 125W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-3 PG-TO220-3
Package / Case TO-220-3 TO-220-3