IPP05CN10L G vs IPP08CN10L G

Product Attributes

Part Number IPP05CN10L G IPP08CN10L G
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPP05CN10L G IPP08CN10L G
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.1mOhm @ 100A, 10V 8mOhm @ 98A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA 2.4V @ 130µA
Gate Charge (Qg) (Max) @ Vgs 163 nC @ 10 V 90 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 15600 pF @ 50 V 8610 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 300W (Tc) 167W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-3 PG-TO220-3
Package / Case TO-220-3 TO-220-3