| Part Number | IPP084N06L3GXKSA1 | IPP084N06L3GHKSA1 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
|
|
|
| Product Status | Not For New Designs | Obsolete |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) | 50A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 8.4mOhm @ 50A, 10V | 8.4mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 34µA | 2.2V @ 34µA |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 4.5 V | 29 nC @ 4.5 V |
| Vgs (Max) | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4900 pF @ 30 V | 4900 pF @ 30 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 79W (Tc) | 79W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Supplier Device Package | PG-TO220-3 | PG-TO220-3 |
| Package / Case | TO-220-3 | TO-220-3 |