IPP06CNE8N G vs IPP08CNE8N G

Product Attributes

Part Number IPP06CNE8N G IPP08CNE8N G
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPP06CNE8N G IPP08CNE8N G
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 85 V 85 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 95A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 6.5mOhm @ 100A, 10V 6.4mOhm @ 95A, 10V
Vgs(th) (Max) @ Id 4V @ 180µA 4V @ 130µA
Gate Charge (Qg) (Max) @ Vgs 138 nC @ 10 V 99 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 9240 pF @ 40 V 6690 pF @ 40 V
FET Feature - -
Power Dissipation (Max) 214W (Tc) 167W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-3 PG-TO220-3
Package / Case TO-220-3 TO-220-3