IPP052N06L3GXKSA1 vs IPP052N06L3GHKSA1

Product Attributes

Part Number IPP052N06L3GXKSA1 IPP052N06L3GHKSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPP052N06L3GXKSA1 IPP052N06L3GHKSA1
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 5mOhm @ 80A, 10V 5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 2.2V @ 58µA 2.2V @ 58µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 4.5 V 50 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 8400 pF @ 30 V 8400 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 115W (Tc) 115W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-3 PG-TO220-3
Package / Case TO-220-3 TO-220-3