IPP041N04NGXKSA1 vs IPP048N04NGXKSA1

Product Attributes

Part Number IPP041N04NGXKSA1 IPP048N04NGXKSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPP041N04NGXKSA1 IPP048N04NGXKSA1
Product Status Active Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 4.1mOhm @ 80A, 10V 4.8mOhm @ 70A, 10V
Vgs(th) (Max) @ Id 4V @ 45µA 4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V 41 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4500 pF @ 20 V 3300 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 94W (Tc) 79W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-3-1 PG-TO220-3
Package / Case TO-220-3 TO-220-3