IPP028N08N3GXKSA1 vs IPP028N08N3GHKSA1

Product Attributes

Part Number IPP028N08N3GXKSA1 IPP028N08N3GHKSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPP028N08N3GXKSA1 IPP028N08N3GHKSA1
Product Status Active Obsolete
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 80 V -
Current - Continuous Drain (Id) @ 25°C 100A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V -
Rds On (Max) @ Id, Vgs 2.8mOhm @ 100A, 10V -
Vgs(th) (Max) @ Id 3.5V @ 270µA -
Gate Charge (Qg) (Max) @ Vgs 206 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 14200 pF @ 40 V -
FET Feature - -
Power Dissipation (Max) 300W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -
Mounting Type Through Hole -
Supplier Device Package PG-TO220-3 -
Package / Case TO-220-3 -