| Part Number | IPN80R600P7ATMA1 | IPN80R900P7ATMA1 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
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| Product Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800 V | 800 V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) | 6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 3.4A, 10V | 900mOhm @ 2.2A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 170µA | 3.5V @ 110µA |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V | 15 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 570 pF @ 500 V | 350 pF @ 500 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 7.4W (Tc) | 7W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | PG-SOT223 | PG-SOT223 |
| Package / Case | TO-261-4, TO-261AA | TO-261-4, TO-261AA |