IPN70R360P7SATMA1 vs IPN60R360P7SATMA1

Product Attributes

Part Number IPN70R360P7SATMA1 IPN60R360P7SATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPN70R360P7SATMA1 IPN60R360P7SATMA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700 V 600 V
Current - Continuous Drain (Id) @ 25°C 12.5A (Tc) 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 360mOhm @ 3A, 10V 360mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id 3.5V @ 150µA 4V @ 140µA
Gate Charge (Qg) (Max) @ Vgs 16.4 nC @ 10 V 13 nC @ 10 V
Vgs (Max) ±16V ±20V
Input Capacitance (Ciss) (Max) @ Vds 517 pF @ 400 V 555 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 7.2W (Tc) 7W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-SOT223 PG-SOT223
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA