| Part Number | IPN60R2K0PFD7SATMA1 | IPN60R1K0PFD7SATMA1 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
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| Product Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) | 4.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 500mA, 10V | 1Ohm @ 1A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 30µA | 4.5V @ 50µA |
| Gate Charge (Qg) (Max) @ Vgs | 3.8 nC @ 10 V | 6 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 134 pF @ 400 V | 230 pF @ 400 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 6W (Tc) | 6W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | PG-SOT223-3-1 | PG-SOT223-4 |
| Package / Case | TO-261-3 | TO-261-4, TO-261AA |