| Part Number | IPL65R1K5C6SATMA1 | IPL65R1K0C6SATMA1 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
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| Product Status | Not For New Designs | Not For New Designs |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) | 4.2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1A, 10V | 1Ohm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 100µA | 3.5V @ 150µA |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V | 15 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 225 pF @ 100 V | 328 pF @ 100 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 26.6W (Tc) | 34.7W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TSON-8-2 | PG-TSON-8-2 |
| Package / Case | 8-PowerTDFN | 8-PowerTDFN |