IPL60R065P7AUMA1 vs IPL60R065C7AUMA1

Product Attributes

Part Number IPL60R065P7AUMA1 IPL60R065C7AUMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPL60R065P7AUMA1 IPL60R065C7AUMA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 41A (Tc) 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 65mOhm @ 15.9A, 10V 65mOhm @ 15.9A, 10V
Vgs(th) (Max) @ Id 4V @ 800µA 4V @ 800µA
Gate Charge (Qg) (Max) @ Vgs 67 nC @ 10 V 68 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2895 pF @ 400 V 2850 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 201W (Tc) 180W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-VSON-4 PG-VSON-4-1
Package / Case 4-PowerTSFN 4-PowerTSFN