IPI80P03P4L04AKSA1 vs IPI80P03P4L07AKSA1

Product Attributes

Part Number IPI80P03P4L04AKSA1 IPI80P03P4L07AKSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPI80P03P4L04AKSA1 IPI80P03P4L07AKSA1
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.4mOhm @ 80A, 10V 7.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 2V @ 253µA 2V @ 130µA
Gate Charge (Qg) (Max) @ Vgs 160 nC @ 10 V 80 nC @ 10 V
Vgs (Max) +5V, -16V +5V, -16V
Input Capacitance (Ciss) (Max) @ Vds 11300 pF @ 25 V 5700 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 137W (Tc) 88W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO262-3 PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA