IPI70N10S312AKSA1 vs IPI70N10S3L12AKSA1

Product Attributes

Part Number IPI70N10S312AKSA1 IPI70N10S3L12AKSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPI70N10S312AKSA1 IPI70N10S3L12AKSA1
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 70A (Tc) 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 11.6mOhm @ 70A, 10V 12.1mOhm @ 70A, 10V
Vgs(th) (Max) @ Id 4V @ 83µA 2.4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs 66 nC @ 10 V 80 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4355 pF @ 25 V 5550 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 125W (Tc) 125W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO262-3 PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA