Part Number | IPI65R110CFDXKSA1 | IPI65R310CFDXKSA1 |
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Manufacturer | Infineon Technologies | Infineon Technologies |
Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
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Product Status | Obsolete | Obsolete |
FET Type | N-Channel | N-Channel |
Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650 V | 650 V |
Current - Continuous Drain (Id) @ 25°C | 31.2A (Tc) | 11.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V |
Rds On (Max) @ Id, Vgs | 110mOhm @ 12.7A, 10V | 310mOhm @ 4.4A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 1.3mA | 4.5V @ 440µA |
Gate Charge (Qg) (Max) @ Vgs | 118 nC @ 10 V | 41 nC @ 10 V |
Vgs (Max) | ±20V | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 3240 pF @ 100 V | 1100 pF @ 100 V |
FET Feature | - | - |
Power Dissipation (Max) | 277.8W (Tc) | 104.2W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole | Through Hole |
Supplier Device Package | PG-TO262-3 | PG-TO262-3 |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA |