IPI65R110CFDXKSA1 vs IPI65R310CFDXKSA1

Product Attributes

Part Number IPI65R110CFDXKSA1 IPI65R310CFDXKSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPI65R110CFDXKSA1 IPI65R310CFDXKSA1
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 31.2A (Tc) 11.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 12.7A, 10V 310mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.3mA 4.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs 118 nC @ 10 V 41 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3240 pF @ 100 V 1100 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 277.8W (Tc) 104.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO262-3 PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA