IPI50R250CP vs IPI60R250CP

Product Attributes

Part Number IPI50R250CP IPI60R250CP
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPI50R250CP IPI60R250CP
Product Status Active Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 500 V -
Current - Continuous Drain (Id) @ 25°C 13A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 250mOhm @ 7.8A, 10V -
Vgs(th) (Max) @ Id 3.5V @ 520µA -
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 1420 pF @ 100 V -
FET Feature - -
Power Dissipation (Max) 114W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Through Hole -
Supplier Device Package PG-TO262-3-1 -
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA -