IPI50R250CP vs IPI50R350CP

Product Attributes

Part Number IPI50R250CP IPI50R350CP
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPI50R250CP IPI50R350CP
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 550 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc) 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 250mOhm @ 7.8A, 10V 350mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id 3.5V @ 520µA 3.5V @ 370µA
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V 25 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1420 pF @ 100 V 1020 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 114W (Tc) 89W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO262-3-1 PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA