IPI147N12N3G vs IPI144N12N3G

Product Attributes

Part Number IPI147N12N3G IPI144N12N3G
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPI147N12N3G IPI144N12N3G
Product Status Active Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 120 V -
Current - Continuous Drain (Id) @ 25°C 56A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 14.7mOhm @ 56A, 10V -
Vgs(th) (Max) @ Id 4V @ 61µA -
Gate Charge (Qg) (Max) @ Vgs 49 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 3220 pF @ 60 V -
FET Feature - -
Power Dissipation (Max) 107W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -
Mounting Type Through Hole -
Supplier Device Package PG-TO262-3-1 -
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA -