IPI037N08N3GHKSA1 vs IPI037N08N3GXKSA1

Product Attributes

Part Number IPI037N08N3GHKSA1 IPI037N08N3GXKSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPI037N08N3GHKSA1 IPI037N08N3GXKSA1
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 3.75mOhm @ 100A, 10V 3.75mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.5V @ 155µA 3.5V @ 155µA
Gate Charge (Qg) (Max) @ Vgs 117 nC @ 10 V 117 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 8110 pF @ 40 V 8110 pF @ 40 V
FET Feature - -
Power Dissipation (Max) 214W (Tc) 214W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO262-3 PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA