Part Number | IPG20N06S4L11ATMA1 | IPG20N06S4L11AATMA1 |
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Manufacturer | Infineon Technologies | Infineon Technologies |
Category | Transistors - FETs, MOSFETs - Arrays | Transistors - FETs, MOSFETs - Arrays |
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Product Status | Active | Active |
FET Type | 2 N-Channel (Dual) | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate | Logic Level Gate |
Drain to Source Voltage (Vdss) | 60V | 60V |
Current - Continuous Drain (Id) @ 25°C | 20A | 20A |
Rds On (Max) @ Id, Vgs | 11.2mOhm @ 17A, 10V | 11.2mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 28µA | 2.2V @ 28µA |
Gate Charge (Qg) (Max) @ Vgs | 53nC @ 10V | 53nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4020pF @ 25V | 4020pF @ 25V |
Power - Max | 65W | 65W |
Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount | Surface Mount, Wettable Flank |
Package / Case | 8-PowerVDFN | 8-PowerVDFN |
Supplier Device Package | PG-TDSON-8-4 | PG-TDSON-8-10 |