IPG20N06S2L65ATMA1 vs IPG20N06S2L65AATMA1

Product Attributes

Part Number IPG20N06S2L65ATMA1 IPG20N06S2L65AATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Arrays Transistors - FETs, MOSFETs - Arrays
IPG20N06S2L65ATMA1 IPG20N06S2L65AATMA1
Product Status Active Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 55V 55V
Current - Continuous Drain (Id) @ 25°C 20A 20A
Rds On (Max) @ Id, Vgs 65mOhm @ 15A, 10V 65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2V @ 14µA 2V @ 14µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 410pF @ 25V 410pF @ 25V
Power - Max 43W 43W
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount, Wettable Flank
Package / Case 8-PowerVDFN 8-PowerVDFN
Supplier Device Package PG-TDSON-8-4 PG-TDSON-8-10