IPG20N04S408ATMA1 vs IPG20N04S409ATMA1

Product Attributes

Part Number IPG20N04S408ATMA1 IPG20N04S409ATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Arrays Transistors - FETs, MOSFETs - Arrays
IPG20N04S408ATMA1 IPG20N04S409ATMA1
Product Status Active Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Standard Standard
Drain to Source Voltage (Vdss) 40V 40V
Current - Continuous Drain (Id) @ 25°C 20A 20A (Tc)
Rds On (Max) @ Id, Vgs 7.6mOhm @ 17A, 10V 8.6mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 30µA 4V @ 22µA
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V 28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2940pF @ 25V 2250pF @ 25V
Power - Max 65W 54W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 8-PowerVDFN 8-PowerTDFN
Supplier Device Package PG-TDSON-8-4 PG-TDSON-8