IPG16N10S461AATMA1 vs IPG16N10S4L61AATMA1

Product Attributes

Part Number IPG16N10S461AATMA1 IPG16N10S4L61AATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Arrays Transistors - FETs, MOSFETs - Arrays
IPG16N10S461AATMA1 IPG16N10S4L61AATMA1
Product Status Active Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Standard Logic Level Gate
Drain to Source Voltage (Vdss) 100V 100V
Current - Continuous Drain (Id) @ 25°C 16A 16A
Rds On (Max) @ Id, Vgs 61mOhm @ 16A, 10V 61mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 3.5V @ 9µA 2.1V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 490pF @ 25V 845pF @ 25V
Power - Max 29W 29W
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Package / Case 8-PowerVDFN 8-PowerVDFN
Supplier Device Package PG-TDSON-8-10 PG-TDSON-8-10