IPD95R450P7ATMA1 vs IPD95R750P7ATMA1

Product Attributes

Part Number IPD95R450P7ATMA1 IPD95R750P7ATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPD95R450P7ATMA1 IPD95R750P7ATMA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 950 V 950 V
Current - Continuous Drain (Id) @ 25°C 14A (Tc) 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 450mOhm @ 7.2A, 10V 750mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 360µA 3.5V @ 220µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V 23 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1053 pF @ 400 V 712 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 104W (Tc) 73W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3 PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63