IPD85P04P407ATMA2 vs IPD85P04P407ATMA1

Product Attributes

Part Number IPD85P04P407ATMA2 IPD85P04P407ATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPD85P04P407ATMA2 IPD85P04P407ATMA1
Product Status Active Not For New Designs
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 85A (Tc) 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V
Rds On (Max) @ Id, Vgs 7.3mOhm @ 85A, 10V 7.3mOhm @ 85A, 10V
Vgs(th) (Max) @ Id 4V @ 150µA 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 89 nC @ 10 V 89 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6085 pF @ 25 V 6085 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 88W (Tc) 88W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3-313 PG-TO252-3-313
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63