IPD80R450P7ATMA1 vs IPD80R750P7ATMA1

Product Attributes

Part Number IPD80R450P7ATMA1 IPD80R750P7ATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPD80R450P7ATMA1 IPD80R750P7ATMA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc) 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 450mOhm @ 4.5A, 10V 750mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id 3.5V @ 220µA 3.5V @ 140µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V 17 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 770 pF @ 500 V 460 pF @ 500 V
FET Feature Super Junction -
Power Dissipation (Max) 73W (Tc) 51W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-2 PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63