| Part Number | IPD65R650CEAUMA1 | IPD65R650CEATMA1 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
|
|
|
| Product Status | Active | Obsolete |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) | 10.1A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 2.1A, 10V | 650mOhm @ 2.1A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 210µA | 3.5V @ 0.21mA |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V | 23 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 100 V | 440 pF @ 100 V |
| FET Feature | - | Super Junction |
| Power Dissipation (Max) | 86W (Tc) | 86W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO252-3 | PG-TO252-3 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |