IPD60R400CEAUMA1 vs IPD60R800CEAUMA1

Product Attributes

Part Number IPD60R400CEAUMA1 IPD60R800CEAUMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPD60R400CEAUMA1 IPD60R800CEAUMA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 14.7A (Tc) 8.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 400mOhm @ 3.8A, 10V 800mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 3.5V @ 300µA 3.5V @ 170µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V 17.2 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 100 V 373 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 112W (Tc) 74W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-2 PG-TO252-3-344
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63