IPD60R600P7SAUMA1 vs IPD70R600P7SAUMA1

Product Attributes

Part Number IPD60R600P7SAUMA1 IPD70R600P7SAUMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPD60R600P7SAUMA1 IPD70R600P7SAUMA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 700 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc) 8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 1.7A, 10V 600mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id 4V @ 80µA 3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 10 V 10.5 nC @ 10 V
Vgs (Max) ±20V ±16V
Input Capacitance (Ciss) (Max) @ Vds 363 pF @ 400 V 364 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 30W (Tc) 43W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3 PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63