IPD60R460CEAUMA1 vs IPD60R460CEATMA1

Product Attributes

Part Number IPD60R460CEAUMA1 IPD60R460CEATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPD60R460CEAUMA1 IPD60R460CEATMA1
Product Status Not For New Designs Obsolete
FET Type - N-Channel
Technology - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 600 V
Current - Continuous Drain (Id) @ 25°C - 9.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V
Rds On (Max) @ Id, Vgs - 460mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id - 3.5V @ 280µA
Gate Charge (Qg) (Max) @ Vgs - 28 nC @ 10 V
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds - 620 pF @ 100 V
FET Feature - -
Power Dissipation (Max) - 74W (Tc)
Operating Temperature - -40°C ~ 150°C (TJ)
Mounting Type - Surface Mount
Supplier Device Package - PG-TO252-3
Package / Case - TO-252-3, DPak (2 Leads + Tab), SC-63