IPD60R400CEAUMA1 vs IPD60R460CEAUMA1

Product Attributes

Part Number IPD60R400CEAUMA1 IPD60R460CEAUMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPD60R400CEAUMA1 IPD60R460CEAUMA1
Product Status Active Not For New Designs
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 600 V -
Current - Continuous Drain (Id) @ 25°C 14.7A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 400mOhm @ 3.8A, 10V -
Vgs(th) (Max) @ Id 3.5V @ 300µA -
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 100 V -
FET Feature - -
Power Dissipation (Max) 112W (Tc) -
Operating Temperature -40°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Supplier Device Package PG-TO252-2 -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 -