IPD60R2K0PFD7SAUMA1 vs IPD60R280PFD7SAUMA1

Product Attributes

Part Number IPD60R2K0PFD7SAUMA1 IPD60R280PFD7SAUMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPD60R2K0PFD7SAUMA1 IPD60R280PFD7SAUMA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 500mA, 10V 280mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 30µA 4.5V @ 180µA
Gate Charge (Qg) (Max) @ Vgs 3.8 nC @ 10 V 15.3 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 134 pF @ 400 V 656 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 20W (Tc) 51W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3-344 PG-TO252-3-344
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63