IPD60R1K5CEAUMA1 vs IPD60R1K5CEATMA1

Product Attributes

Part Number IPD60R1K5CEAUMA1 IPD60R1K5CEATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPD60R1K5CEAUMA1 IPD60R1K5CEATMA1
Product Status Active Discontinued at Digi-Key
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 5A (Tc) 3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 1.1A, 10V 1.5Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 90µA 3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 9.4 nC @ 10 V 9.4 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 100 V 200 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 49W (Tc) 28W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3 PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63