| Part Number | IPD60N10S4L12ATMA1 | IPD60N10S412ATMA1 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
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| Product Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) | 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 10V |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 60A, 10V | 12.2mOhm @ 60A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 46µA | 3.5V @ 46µA |
| Gate Charge (Qg) (Max) @ Vgs | 49 nC @ 10 V | 34 nC @ 10 V |
| Vgs (Max) | ±16V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3170 pF @ 25 V | 2470 pF @ 25 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 94W (Tc) | 94W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO252-3-313 | PG-TO252-3-313 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |