IPD50R950CEBTMA1 vs IPD50R950CEATMA1

Product Attributes

Part Number IPD50R950CEBTMA1 IPD50R950CEATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPD50R950CEBTMA1 IPD50R950CEATMA1
Product Status Discontinued at Digi-Key Discontinued at Digi-Key
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 4.3A (Tc) 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 13V 13V
Rds On (Max) @ Id, Vgs 950mOhm @ 1.2A, 13V 950mOhm @ 1.2A, 13V
Vgs(th) (Max) @ Id 3.5V @ 100µA 3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 10.5 nC @ 10 V 10.5 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 231 pF @ 100 V 231 pF @ 100 V
FET Feature Super Junction -
Power Dissipation (Max) 34W (Tc) 53W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3-11 PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63