IPD50R950CEAUMA1 vs IPD50R950CEATMA1

Product Attributes

Part Number IPD50R950CEAUMA1 IPD50R950CEATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPD50R950CEAUMA1 IPD50R950CEATMA1
Product Status Active Discontinued at Digi-Key
FET Type - N-Channel
Technology - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 500 V
Current - Continuous Drain (Id) @ 25°C - 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 13V
Rds On (Max) @ Id, Vgs - 950mOhm @ 1.2A, 13V
Vgs(th) (Max) @ Id - 3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs - 10.5 nC @ 10 V
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds - 231 pF @ 100 V
FET Feature - -
Power Dissipation (Max) - 53W (Tc)
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type - Surface Mount
Supplier Device Package - PG-TO252-3
Package / Case - TO-252-3, DPak (2 Leads + Tab), SC-63