IPD60R520CPBTMA1 vs IPD50R520CPBTMA1

Product Attributes

Part Number IPD60R520CPBTMA1 IPD50R520CPBTMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPD60R520CPBTMA1 IPD50R520CPBTMA1
Product Status Obsolete Obsolete
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 600 V -
Current - Continuous Drain (Id) @ 25°C 6.8A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 520mOhm @ 3.8A, 10V -
Vgs(th) (Max) @ Id 3.5V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 630 pF @ 100 V -
FET Feature - -
Power Dissipation (Max) 66W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Supplier Device Package PG-TO252-3 -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 -