IPD50R380CEAUMA1 vs IPD50R3K0CEAUMA1

Product Attributes

Part Number IPD50R380CEAUMA1 IPD50R3K0CEAUMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPD50R380CEAUMA1 IPD50R3K0CEAUMA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 14.1A (Tc) 1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 13V 13V
Rds On (Max) @ Id, Vgs 380mOhm @ 3.2A, 13V 3Ohm @ 400mA, 13V
Vgs(th) (Max) @ Id 3.5V @ 260µA 3.5V @ 30µA
Gate Charge (Qg) (Max) @ Vgs 24.8 nC @ 10 V 4.3 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 584 pF @ 100 V 84 pF @ 100 V
FET Feature Super Junction -
Power Dissipation (Max) 98W (Tc) 26W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3 PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63