IPD50R280CEBTMA1 vs IPD50R2K0CEBTMA1

Product Attributes

Part Number IPD50R280CEBTMA1 IPD50R2K0CEBTMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPD50R280CEBTMA1 IPD50R2K0CEBTMA1
Product Status Discontinued at Digi-Key Obsolete
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 500 V -
Current - Continuous Drain (Id) @ 25°C 13A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 13V -
Rds On (Max) @ Id, Vgs 280mOhm @ 4.2A, 13V -
Vgs(th) (Max) @ Id 3.5V @ 350µA -
Gate Charge (Qg) (Max) @ Vgs 32.6 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 773 pF @ 100 V -
FET Feature Super Junction -
Power Dissipation (Max) 92W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Supplier Device Package PG-TO252-3-11 -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 -