IPD50P03P4L11ATMA2 vs IPD50P03P4L11ATMA1

Product Attributes

Part Number IPD50P03P4L11ATMA2 IPD50P03P4L11ATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPD50P03P4L11ATMA2 IPD50P03P4L11ATMA1
Product Status Active Not For New Designs
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V
Rds On (Max) @ Id, Vgs 10.5mOhm @ 50A, 10V 10.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 85µA 2V @ 85µA
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V 55 nC @ 10 V
Vgs (Max) +5V, -16V +5V, -16V
Input Capacitance (Ciss) (Max) @ Vds 3770 pF @ 25 V 3770 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 58W (Tc) 58W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3-11 PG-TO252-3-11
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63