IPD50N06S4L12ATMA2 vs IPD50N06S4L12ATMA1

Product Attributes

Part Number IPD50N06S4L12ATMA2 IPD50N06S4L12ATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPD50N06S4L12ATMA2 IPD50N06S4L12ATMA1
Product Status Active Discontinued at Digi-Key
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 50A, 10V 12mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.2V @ 20µA 2.2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V 40 nC @ 10 V
Vgs (Max) ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 2890 pF @ 25 V 2890 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 50W (Tc) 50W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3-11 PG-TO252-3-11
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63