IPD50N04S408ATMA1 vs IPD50N04S308ATMA1

Product Attributes

Part Number IPD50N04S408ATMA1 IPD50N04S308ATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPD50N04S408ATMA1 IPD50N04S308ATMA1
Product Status Active Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 7.9mOhm @ 50A, 10V 7.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 17µA 4V @ 40µA
Gate Charge (Qg) (Max) @ Vgs 22.4 nC @ 10 V 35 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1780 pF @ 6 V 2350 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 46W (Tc) 68W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3-313 PG-TO252-3-11
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63