IPD25N06S4L30ATMA2 vs IPD25N06S4L30ATMA1

Product Attributes

Part Number IPD25N06S4L30ATMA2 IPD25N06S4L30ATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPD25N06S4L30ATMA2 IPD25N06S4L30ATMA1
Product Status Active Discontinued at Digi-Key
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc) 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 30mOhm @ 25A, 10V 30mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.2V @ 8µA 2.2V @ 8µA
Gate Charge (Qg) (Max) @ Vgs 16.3 nC @ 10 V 16.3 nC @ 10 V
Vgs (Max) ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 1220 pF @ 25 V 1220 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 29W (Tc) 29W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3-11 PG-TO252-3-11
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63