| Part Number | IPD135N03LGATMA1 | IPD135N03LGBTMA1 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
|
|
|
| Product Status | Active | Not For New Designs |
| FET Type | N-Channel | - |
| Technology | MOSFET (Metal Oxide) | - |
| Drain to Source Voltage (Vdss) | 30 V | - |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) | - |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | - |
| Rds On (Max) @ Id, Vgs | 13.5mOhm @ 30A, 10V | - |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA | - |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V | - |
| Vgs (Max) | ±20V | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 15 V | - |
| FET Feature | - | - |
| Power Dissipation (Max) | 31W (Tc) | - |
| Operating Temperature | -55°C ~ 175°C (TJ) | - |
| Mounting Type | Surface Mount | - |
| Supplier Device Package | PG-TO252-3 | - |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | - |