| Part Number | IPD19DP10NMATMA1 | IPD11DP10NMATMA1 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
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| Product Status | Active | Active |
| FET Type | P-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Ta), 13.7A (Tc) | 3.4A (Ta), 22A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 186mOhm @ 12A, 10V | 111mOhm @ 18A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1.04mA | 4V @ 1.7mA |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V | 74 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 50 V | 3200 pF @ 50 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 3W (Ta), 83W (Tc) | 3W (Ta), 125W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO252-3 | PG-TO252-3 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |