IPD06P005NATMA1 vs IPD06P007NATMA1

Product Attributes

Part Number IPD06P005NATMA1 IPD06P007NATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPD06P005NATMA1 IPD06P007NATMA1
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 6.5A (Tc) 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 250mOhm @ 6.5A, 10V 400mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id 4V @ 270µA 4V @ 166µA
Gate Charge (Qg) (Max) @ Vgs 10.6 nC @ 10 V 6.7 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 420 pF @ 30 V 260 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 28W (Tc) 19W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3 PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63